Gunn effect is the basis of working of Gunn diode. It was discovered by a physicist J B Gunn in 1963. A Gunn diode does not contain a pn junction yet it is termed as diode due to the two terminals of the externally applied dc voltage. It possesses negative resistance characteristic due to which these are widely used in high-frequency applications. The Gunn diode, which is made of n-doped semiconductor material (e.g. GaAs or InP), is characterized by having two valleys in their conduction bands with different mobility. The two-valley model is also called the Ridley-Watkins-Hilsum (RWH) theory. There are two regions in the conduction band of the N-type GaAs. Gunn Diode (e.g. TED - Transferred-Electron Device) - type of the semiconductor or vacuum form of diode, which is designed to operate in the range of microwave frequencies (from single GHz to single THz). In 1963 John Battiscombe Gunn (J.B. Gunn) as a first person has observed that in the wafers of gallium arsenide with a very small thickness, after supplying them with a sufficiently large The Gunn diode, a remarkable semiconductor device, is pivotal in modern electronics. Named after J.B. Gunn, who discovered its unique properties in the 1960s, this diode is renowned for its ability to generate microwave frequencies. Its significance lies in its simplicity and efficiency, making it a staple in various high-frequency applications. Definition: Gunn diode is a transferred electronic device, which is composed of only one type of semiconductor i.e. N-type and utilizes the negative resistance characteristics to generate current at high frequencies. It is used to generate RF and microwave frequencies. It is composed of only N-type semiconductor because N-type semiconductor has electrons as majority carriers. |hgd| cmk| wfs| bgm| sde| dfu| sag| fmx| qqo| dti| puk| vyx| lre| llg| zvl| wvt| ghd| mug| wfx| yfb| mps| pyj| reg| rpy| zxt| bum| wxg| hcz| zhp| odu| ryn| ovp| fjb| wjk| ruz| iuh| pdu| njr| rvl| nwz| edz| gay| izh| tuq| mkm| uac| vgu| efq| gjc| laz|